內地科研指12英吋碳化硅晶圓激光剝離技術取得重大突破 可大降生產成本
據《證券時報》報道,中國科學院半導體研究所科技成果轉化企業北京晶飛半導體科技,近日在碳化硅晶圓加工技術領域取得重大突破,成功利用自主研發的激光剝離設備實現12英吋碳化硅晶圓的剝離。該突破標誌著內地在第三代半導體關鍵製造裝備領域邁出重要一步,為全球碳化硅產業的降本增效提供全新解決方案。
此次技術突破對碳化硅產業發展具有多重意義,包括大幅降低生產成本,其中,12英吋碳化硅晶圓相比目前主流的6英吋晶圓,可用面積提升約四倍,單位芯片成本降低30%至40%。同時提升產業供給能力,解決大尺寸碳化硅晶圓加工的技術瓶頸,為全球碳化硅產能擴張提供設備保障。
此外,技術突破加速國產化替代進程,打破國外廠商在大尺寸碳化硅加工設備領域的技術壟斷,為內地半導體裝備自主可控提供重要支撐。而成本降低將加速碳化硅器件在新能源汽車及可再生能源等領域的應用。
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