彤程新材(603650.SH)：光刻膠項目目前已逐步進入試生產階段
格隆匯11月5日丨彤程新材(603650.SH)公佈，日前公司決定通過全資子公司上海彤程電子材料有限公司（以下簡稱“彤程電子”）在上海化學工業區投資建設年產1.1萬噸半導體、平板顯示用光刻膠及2萬噸相關配套試劑項目。該項目工程階段已竣工，目前已逐步進入試生產階段。公司上海化學工業區工廠佔地36200平方米，設計能力年產1千噸半導體光刻膠、1萬噸顯示用光刻膠和2萬噸高純EBR試劑（光刻膠去邊劑）。同時在國際國內半導體廠商及光刻膠廠商戰略合作推動下，完成了產線優化及品控升級。具體情況如下：
公司上海化學工業區工廠年產1千噸半導體光刻膠量產產線，主要包括年產300/400噸ArF及KrF光刻膠量產產線，通過採用超高純PFA（塗層）設備、引入高精度物料流量控制系統、配以自研的高精度高效率光刻過濾系統，可以實現ppt級金屬雜質及0.1um級別的顆粒管控，具備不同配方先進製程光刻膠的生產能力。
在ArF光刻膠產品方面，公司已經完成ArF光刻膠部分型號的開發，首批ArF光刻膠的各項出貨指標能對標國際光刻膠大廠產品，已具備量產能力，目前處於量產前的光刻工藝測試及產品驗證階段，能否驗證通過尚存在一定的不確定性。產能可同時供應國內大部分芯片製造商，能較好地滿足國內先進製程光刻膠的部分需求。
目前，公司G線光刻膠已經佔據國內較大的市場份額；I線光刻膠已廣泛應用於國內6"、8"、12"集成電路產線，支持的工藝製程涵蓋14nm及以上工藝。KrF光刻膠量產品種達20種以上，穩定供應國內頭部芯片製造商。
為了解決ArF光刻膠所需的高純溶劑及國內先進工藝製程的需求，公司已經搭建完成高純EBR裝置，成為國內首家建有高純EBR精餾塔設備及掌握高純精餾技術的本土溶劑供應商。公司生產的EBR溶劑已達到G4等級規格，可滿足國內40納米以下工藝製程的芯片製造技術需求，年產2萬噸的規模量產能力可有效滿足國內先進製程需求。預計第四季度將完成高純度G5等級EBR的驗證，已在國內幾家先進芯片製造商中逐步推動產品驗證。
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