富特科技(301607.SZ):公司多個量產項目已經應用第三代寬禁帶半導體器件
格隆匯5月8日丨富特科技(301607.SZ)在投資者關係表示,公司基於第三代寬禁帶半導體材料碳化硅(SiC)的高耐溫特性、高阻斷電壓、高開關速度和低損耗等特性,自主研發了基於第三代寬禁帶半導體器件的拓撲應用技術,在電路拓撲層級進行升級優化,簡化電路結構設計並提高開關頻率,顯著提升產品的功率密度,同時電路設計優化也減少了元器件數量,從而達到降本和提升產品質量可靠性的目的。截至目前,公司多個量產項目已經應用第三代寬禁帶半導體器件,與此同時,公司也在積極開展第三代寬禁帶半導體材料氮化鎵(GaN)的應用研究,開發進展會在後續的定期報告中適時披露。
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