富特科技(301607.SZ):公司多个量产项目已经应用第三代宽禁带半导体器件
格隆汇5月8日丨富特科技(301607.SZ)在投资者关系表示,公司基于第三代宽禁带半导体材料碳化硅(SiC)的高耐温特性、高阻断电压、高开关速度和低损耗等特性,自主研发了基于第三代宽禁带半导体器件的拓扑应用技术,在电路拓扑层级进行升级优化,简化电路结构设计并提高开关频率,显著提升产品的功率密度,同时电路设计优化也减少了元器件数量,从而达到降本和提升产品质量可靠性的目的。截至目前,公司多个量产项目已经应用第三代宽禁带半导体器件,与此同时,公司也在积极开展第三代宽禁带半导体材料氮化镓(GaN)的应用研究,开发进展会在后续的定期报告中适时披露。
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