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传台积电2nm制程研发有重大突破 业界料将抛离三星
阿思达克 09-22 11:27
据台湾传媒报道,台积电(TSM.US)2nm制程研发获重大突破,而供应链消息指公司2nm改采全新的多桥通道场效电晶体(MBCFET)架构,研发进度超前,业界预期2023年下半年的风险性试产良率即可达九成,相信有助未来持续获取来自苹果(AAPL.US)、NVIDIA等大厂的先进制程大单,抛离竞争对手三星。

报道指,三星预期年底来投入5nm制程,进度远落後於台积电,加上台积电在2nm方面有重大突破,意味未来朝1nm推进的可能性大增,进一步扩大与三星之间的距离。业界亦估计台积电2nm晶片的良率及效应值得期待,估计推出後可获苹果、NVIDIA、高通等大客户采用。(el/a) ~

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