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長江存儲據報計劃擴產DRAM晶片 開發生產HBM所需晶片封裝技術
阿思達克 09-25 16:03
《路透》引述消息報道,中國記憶體生產商長江存儲計劃擴大生產動態隨機存取記憶體(DRAM)晶片,包括用於人工智能晶片的先進版本。消息指公司正開發「硅穿孔」(TSV)先進晶片封裝技術,該技術推疊DRAM以生產高頻寬記憶體(HBM)晶片,同業長鑫存儲已開發HBM晶片。消息亦指,長江存儲考慮調配在建設中的武漢廠房內部分新設備生產DRAM晶片。 據企業登記數據商《企查查》,長江存儲早前成立新公司,在武漢興建第三間晶片廠,註冊資本基礎207億元人民幣。 全球目前主要由3間公司生產HBM,包括美光(MU.US)、南韓SK海力士及南韓三星電子。
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